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| HMC329 v04.1007 GaAs MMIC DOUBLE-BALANCED MIXER, 25 - 40 GHz Typical Applications The HMC329 is ideal for: * LMDS Features Passive: No DC Bias Required Input IP3: +19 dBm LO/RF Isolation: 42 dB Small Size: 0.85 x 0.55 x 0.1 mm 3 MIXERS - CHIP * Microwave Point-to-Point Radios * SATCOM Functional Diagram General Description The HMC329 chip is a miniature passive double balanced mixer which can be used as an upconverter or downconverter from 25-40 GHz in a small chip area of 0.85 x 0.55 mm. Excellent isolations are provided by on-chip baluns, and the chip requires no external components and no DC bias. Measurements were made with the chip mounted and ribbon bonded into in a 50-ohm microstrip test fixture that contains 5-mil alumina substrates between the chip and K-connectors. Measured data includes the parasitic effects of the assembly. RF connections to the chip were made with 0.076 mm (3-mil) ribbon bond with minimal length <0.31mm (<12 mil). Electrical Specifi cations, TA = +25 C LO = +13 dBm, IF = 1 GHz Parameter Min. Frequency Range, RF & LO Frequency Range, IF Conversion Loss Noise Figure (SSB) LO to RF Isolation LO to IF Isolation RF to IF Isolation IP3 (Input) IP2 (Input) 1 dB Compression (Input) * Unless otherwise noted, all measurements performed as downconverter, IF= 1 GHz. 38 25 21 16 45 8 Typ. 25 - 40 DC - 8 9.5 9.5 42 35 28 19 55 11 11.5 11.5 Max. GHz GHz dB dB dB dB dB dBm dBm dBm Units 3 - 52 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC329 v04.1007 GaAs MMIC DOUBLE-BALANCED MIXER, 25 - 40 GHz Conversion Gain vs. Temperature @ LO = +13 dBm 0 Isolation @ LO = +13 dBm 0 -10 ISOLATION (dB) -20 -30 -40 -50 -60 LO / RF RF / IF LO / IF CONVERSION GAIN (dB) -4 -8 3 MIXERS - CHIP 3 - 53 -12 + 25 C + 85 C - 55 C -16 -20 22 24 26 28 30 32 34 36 38 40 42 FREQUENCY (GHz) 22 24 26 28 30 32 34 36 38 40 42 FREQUENCY (GHz) Conversion Gain vs. LO Drive 0 + 7 dBm + 9 dBm + 11 dBm + 13 dBm + 15 dBm Upconverter Performance Conversion Gain @ LO = +13 dBm 0 CONVERSION GAIN (dB) -8 CONVERSION GAIN (dB) 38 40 42 -4 -4 -8 -12 -12 -16 -16 -20 22 24 26 28 30 32 34 36 FREQUENCY (GHz) -20 22 24 26 28 30 32 34 36 38 40 FREQUENCY (GHz) IF Bandwidth @ LO = +13 dBm 0 -4 RESPONSE (dB) -8 -12 IF Return Loss -16 Conversion Gain -20 0 1 2 3 4 5 6 7 8 9 10 11 12 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC329 v04.1007 GaAs MMIC DOUBLE-BALANCED MIXER, 25 - 40 GHz Input IP3 vs. Temperature @ LO = +13 dBm * 25 Input IP3 vs. LO Drive * 25 20 20 IP3 (dBm) 15 + 11 dBm + 13 dBm + 15 dBm IP3 (dBm) 3 MIXERS - CHIP 15 + 25 C + 85 C - 55 C 10 10 5 5 0 26 28 30 32 34 36 38 40 FREQUENCY (GHz) 0 26 28 30 32 34 36 38 40 FREQUENCY (GHz) Input IP2 vs. LO Drive * 70 65 60 IP2 (dBm) 55 50 45 40 26 28 30 32 34 36 38 40 FREQUENCY (GHz) + 11 dBm + 13 dBm + 15 dBm Input IP2 vs. Temperature @ LO = +13 dBm * 70 65 60 IP2 (dBm) 55 50 45 40 26 28 30 32 34 36 38 40 FREQUENCY (GHz) + 25 C + 85 C - 55 C MxN Spurious Outputs as a Down Converter nLO mRF 0 1 2 3 4 RF = 31 GHz @ -10 dBm LO = 32 GHz @ +13 dBm All values in dBc below IF output power level. 0 xx 19 1 7 2 3 4 Input P1dB vs. Temperature @ LO = +13 dBm 15 13 P1dB (dBm) 0 69 41 57 74 67 69 74 71 74 11 9 + 25 C + 85 C - 55 C 7 5 26 28 30 32 34 36 38 40 FREQUENCY (GHz) * Two-tone input power = -5 dBm each tone, 1 MHz spacing. 3 - 54 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC329 v04.1007 GaAs MMIC DOUBLE-BALANCED MIXER, 25 - 40 GHz Absolute Maximum Ratings RF / IF Input LO Drive IF DC Current Storage Temperature Operating Temperature ESD Sensitivity (HBM) +13 dBm +27 dBm 2 mA -65 to +150 C -55 to +85 C Class 1B 3 MIXERS - CHIP NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM]. 2. DIE THICKNESS IS .004". 3. TYPICAL BOND PAD IS .004" SQUARE. 4. BACKSIDE METALLIZATION: GOLD. 5. BOND PAD METALLIZATION: GOLD. 6. BACKSIDE METAL IS GROUND. 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing Die Packaging Information [1] Standard GP-5 Alternate [2] [1] Refer to the "Packaging Information" section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 3 - 55 HMC329 v04.1007 GaAs MMIC DOUBLE-BALANCED MIXER, 25 - 40 GHz Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 0.102mm (0.004") Thick GaAs MMIC 3 mil Ribbon Bond 0.076mm (0.003") 3 MIXERS - CHIP 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). Microstrip substrates should be brought as close to the die as possible in order to minimize ribbon bond length. Typical die-to-substrate spacing is 0.076mm (3 mils). Gold ribbon of 0.075 mm (3 mil) width and minimal length <0.31 mm (<12 mils) is recommended to minimize inductance on RF, LO & IF ports. RF Ground Plane 0.127mm (0.005") Thick Alumina Thin Film Substrate Figure 1. Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. 0.102mm (0.004") Thick GaAs MMIC 3 mil Ribbon Bond 0.076mm (0.003") RF Ground Plane 0.150mm (0.005") Thick Moly Tab 0.254mm (0.010") Thick Alumina Thin Film Substrate Figure 2. Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 C and a tool temperature of 265 C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 C. DO NOT expose the chip to a temperature greater than 320 C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer's schedule. Wire Bonding RF bonds made with 0.003" x 0.0005" ribbon are recommended. These bonds should be thermosonically bonded with a force of 40-60 grams. DC bonds of 0.001" (0.025 mm) diameter, thermosonically bonded, are recommended. Ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made with a nominal stage temperature of 150 C. A minimum amount of ultrasonic energy should be applied to achieve reliable bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm). 3 - 56 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC329 v04.1007 GaAs MMIC DOUBLE-BALANCED MIXER, 25 - 40 GHz Notes: 3 MIXERS - CHIP For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 3 - 57 |
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